Resonant level lifetime in GaAs/AlGaAs double-barrier structures
- 5 October 1987
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 51 (14) , 1089-1090
- https://doi.org/10.1063/1.98749
Abstract
The lifetime of the lowest quasibound state localized between the barriers of a GaAs/AlGaAs double-barrier structure is calculated as a function of barrier and well dimensions. The results are consistent with high-frequency experiments.Keywords
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