High-power integrated optic ir modulator at microwave frequencies
- 15 May 1976
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 28 (10) , 626-627
- https://doi.org/10.1063/1.88591
Abstract
Optical sideband power of 40 mW has been generated in a 25‐μm‐thick GaAs waveguide modulator at 16‐GHz offset from a 4‐W CO2 laser carrier by applying a microwave power of 20 W. The electrode is in the form of a microstrip transmission line, 2.8 cm long and 1 mm wide. The measured modulation bandwidth is 1 GHz at the sideband half‐power points.Keywords
This publication has 4 references indexed in Scilit:
- Thin-film waveguide devicesApplied Physics B Laser and Optics, 1975
- Microwave modulation of CO2 lasers in GaAs optical waveguidesApplied Physics Letters, 1974
- Electro-optic properties of reverse-biased GaAs epitaxial thin films at 10.6 μmApplied Physics Letters, 1973
- Optical Waveguide Structures for CO_2 LasersApplied Optics, 1973