High energy implantation and annealing of phosphorus in silicon
- 1 January 1987
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 19-20, 335-339
- https://doi.org/10.1016/s0168-583x(87)80068-x
Abstract
No abstract availableKeywords
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- The implanted profiles of boron, phosphorus and arsenic in silicon from junction depth measurementsSolid-State Electronics, 1970