Pulsed electron-beam annealing of high-dose arsenic implanted silicon
- 1 August 1980
- journal article
- Published by Springer Nature in Applied Physics A
- Vol. 22 (4) , 385-388
- https://doi.org/10.1007/bf00901061
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Solid solubility of As in Si as determined by ion implantation and cw laser annealingApplied Physics Letters, 1979
- Ruby laser pulse effects in ion implanted semiconductorsAIP Conference Proceedings, 1979
- Stopping cross sections and backscattering factors for 4He ions in matter Z = 1–92, E(4He) = 400–4000 keVAtomic Data and Nuclear Data Tables, 1974