Very High Speed Static Induction Thyristor
- 1 November 1986
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Industry Applications
- Vol. IA-22 (6) , 1000-1006
- https://doi.org/10.1109/tia.1986.4504831
Abstract
Characteristics of a newly developed static induction thyristor (SIThy) are described. The SIThy is irradiated by 2-MeV protons to improve the switching speed as a result of local carrier lifetime control. The characteristics of the proton irradiated SIThy are controlled by annealing conditions to obtain devices for various applications. The switching speed of the SIThy is very high; for example, at an anode current of 50 A, its rise time, storage time, and fall time are 100 ns, 60 ns, and 50 ns, respectively. Thus the newly developed SIThy is suitable for high-speed switching devices.Keywords
This publication has 18 references indexed in Scilit:
- Low-loss high-speed switching devices, 2300-V 150-A static induction thyristorIEEE Transactions on Electron Devices, 1985
- Improving the reverse recovery of power mosfet integral diodes by electron irradiationSolid-State Electronics, 1983
- Electron irradiation of field-controlled thyristorsIEEE Transactions on Electron Devices, 1982
- Normally-off type high speed SI-ThyristorPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1982
- The insulated gate rectifier (IGR): A new power switching devicePublished by Institute of Electrical and Electronics Engineers (IEEE) ,1982
- High speed high voltage static induction thyristorPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1977
- A field terminated diodeIEEE Transactions on Electron Devices, 1976
- Lifetime control in power rectifiers and thyristors using gold, platinum and electron irradiationPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1976
- Some electrical characteristics of a reverse conducting thyristorIEEE Transactions on Electron Devices, 1970
- Control of diffused diode recovery time through gold dopingSolid-State Electronics, 1966