Control of diffused diode recovery time through gold doping
- 30 September 1966
- journal article
- research article
- Published by Elsevier in Solid-State Electronics
- Vol. 9 (9) , 905-907
- https://doi.org/10.1016/0038-1101(66)90045-1
Abstract
No abstract availableThis publication has 7 references indexed in Scilit:
- Precipitation Effects in Diffused Transistor StructuresJournal of Applied Physics, 1966
- Gold as a recombination centre in siliconSolid-State Electronics, 1965
- Minority carrier injection characteristics of the diffused emitter junctionIRE Transactions on Electron Devices, 1962
- Reverse transient characteristics of a P-N junction diode due to minority carrier storageIRE Transactions on Electron Devices, 1962
- The reverse transient behavior of semiconductor junction diodesIRE Transactions on Electron Devices, 1961
- Electrical Properties of Gold-Doped Diffused Silicon Computer DiodesBell System Technical Journal, 1960
- Properties of Gold-Doped SiliconPhysical Review B, 1957