Minority carrier injection characteristics of the diffused emitter junction
- 1 March 1962
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IRE Transactions on Electron Devices
- Vol. 9 (2) , 136-142
- https://doi.org/10.1109/T-ED.1962.14961
Abstract
For the double-diffused transistor, a one-dimensional analysis is presented on the minority carrier injection properties of a diffused emitter junction. This junction is bounded on one side by a reverse biased collector and on the other by an ohmic contact of arbitrary recombination velocity. Furthermore, arbitrary magnitudes of minority carrier lifetime are assumed in both the emitter and base regions of this semiconductor device. Injection efficiency characteristics are graphically illustrated throughout a wide range of physical and geometrical parameters. Assuming, for example, variations in the emitter junction depth, injection properties are demonstrated for transistors exhibiting a fixed collector location and also for transistors exhibiting a fixed base width. A comparison is also shown between the calculated minority carrier injection from this analysis and from other, more approximate, methods.Keywords
This publication has 6 references indexed in Scilit:
- Base Region Transport Characteristics of a Diffused TransistorJournal of Applied Physics, 1962
- Depletion Layer Properties in Double Diffused Transistors†Journal of Electronics and Control, 1961
- Monte Carlo Analysis of Transistor Diffusion Techniques [Letter to the Editor]IBM Journal of Research and Development, 1961
- Diffused Emitter and Base Silicon Transistors*Bell System Technical Journal, 1956
- The Dependence of Transistor Parameters on the Distribution of Base Layer ResistivityProceedings of the IRE, 1956
- The Theory ofp-nJunctions in Semiconductors andp-nJunction TransistorsBell System Technical Journal, 1949