Charge ordering and magnetoresistance in due to reduced double exchange
- 1 August 1996
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 54 (5) , 3007-3010
- https://doi.org/10.1103/physrevb.54.3007
Abstract
Structural, transport, and magnetic properties of (0≤x≤1) have been studied to probe the consequence of strong lattice distortion and reduced double exchange. Charge ordering has been observed over a large composition range of 0.30≤x≤0.80. For 0.33≤x≤0.40, at low temperatures, a magnetic field induces a first-order antiferromagnetic semiconductor to ferromagnetic metal transition and reduces the resistance by several orders of magnitude. These results illustrate the competition between double exchange and mechanisms that promote charge localization. © 1996 The American Physical Society.
Keywords
This publication has 21 references indexed in Scilit:
- Lattice Effects on the Magnetoresistance in Doped LaMnPhysical Review Letters, 1995
- Double Exchange Alone Does Not Explain the Resistivity ofPhysical Review Letters, 1995
- Thousandfold Change in Resistivity in Magnetoresistive La-Ca-Mn-O FilmsScience, 1994
- Charge modulations in : Ordering of polaronsPhysical Review Letters, 1993
- Magnetoresistance in magnetic manganese oxide with intrinsic antiferromagnetic spin structureApplied Physics Letters, 1993
- Giant negative magnetoresistance in perovskitelike ferromagnetic filmsPhysical Review Letters, 1993
- Systematic study of insulator-metal transitions in perovskites RNiO3 (R=Pr,Nd,Sm,Eu) due to closing of charge-transfer gapPhysical Review B, 1992
- Magnetoresistance measurements on the magnetic semiconductor Nd0.5Pb0.5MnO3Physica B: Condensed Matter, 1989
- Effects of Double Exchange in Magnetic CrystalsPhysical Review B, 1960
- Interaction between the-Shells in the Transition Metals. II. Ferromagnetic Compounds of Manganese with Perovskite StructurePhysical Review B, 1951