Photoluminescence-excitation spectroscopy of porous silicon
- 15 February 1994
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 49 (8) , 5706-5709
- https://doi.org/10.1103/physrevb.49.5706
Abstract
We have carried out photoluminescence-excitation spectroscopy (PLE) of porous silicon at different temperatures (90–300 K) for various photoluminescence emission (PL) energies (1.65–2.48 eV). Temperature-dependent PLE results indicate that there are two different processes which contribute to the PL emission. Emission at energies >2.0 eV is mainly due to a homogeneously broadened intrinsic mechanism while the lower-energy emission is from carriers confined in disorder-induced states in nanometer-sized silicon structures.Keywords
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