Dielectric Properties of Sol-Gel Derived Pb(Mg1/3Nb2/3)O3–PbTiO3 Thin Films
- 1 September 1996
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 35 (9S)
- https://doi.org/10.1143/jjap.35.4933
Abstract
Pb(Mg1/3Nb2/3)O3–PbTiO3 (PMN-PT) thin films were fabricated using a sol-gel method. The dielectric constant was found to be strongly dependent on the number of strong Mg–O–Nb bonds in the precursor solution. A large number of strong Mg–O–Nb bonds were formed after a long reflux time. This process resulted in PMN thin films with a large dielectric constants sometimes greater than 3000, with a loss tangent of 0.5%. Relaxor characteristics such as weak temperature dependence and weak dc bias dependence were also observed in the thin films. These results suggest that PMN-PT is an important material for thin film capacitor applications.Keywords
This publication has 7 references indexed in Scilit:
- Fabrication of perovskite lead magnesium niobatePublished by Elsevier ,2003
- Role of PbO and Ag on Insulation Resistance Degradation in Relaxor‐Based MLCsJournal of the American Ceramic Society, 1995
- Processing and properties of Pb(Mg1/3Nb2/3)O3–PbTiO3 thin films by pulsed laser depositionApplied Physics Letters, 1995
- Carrier capture times in 1.5 μm multiple quantum well optical amplifiersApplied Physics Letters, 1992
- Thin‐Layer Dielectrics in the Pb[(Mg1/3Nb2/3)1‐xTix]O3 SystemJournal of the American Ceramic Society, 1991
- Dielectric Properties of Lead‐Magnesium Niobate CeramicsJournal of the American Ceramic Society, 1984
- Electrostrictive effect in Pb(Mg1/3Nb2/3)O3-type materialsFerroelectrics, 1982