Ferromagnetism and high Curie temperature in semiconductor heterostructures with Mn δ-doped GaAs and-type selective doping
Top Cited Papers
- 25 June 2003
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 67 (24) , 241308
- https://doi.org/10.1103/physrevb.67.241308
Abstract
The interaction between the magnetic dopants (Mn) and 2-dimensional hole gas (2DHG) in Mn δ-doped GaAs/Be-doped -type AlGaAs heterostructures, where holes were supplied from the Be-doped AlGaAs to the Mn δ-doped GaAs, realized ferromagnetic ordering. The Curie temperature of the heterostructure prepared with suitable growth conditions was 172 K, highest among the values reported in III-V (InAs, GaAs) magnetic semiconductors.
Keywords
All Related Versions
This publication has 23 references indexed in Scilit:
- Ferromagnet (MnAs)/III V semiconductor hybrid structuresSemiconductor Science and Technology, 2002
- Epitaxial MnAs/GaAs/MnAs trilayer magnetic heterostructuresApplied Physics Letters, 1999
- Epitaxial growth and properties of III–V magnetic semiconductor (GaMn)As and its heterostructuresJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1998
- Transport properties and origin of ferromagnetism in (Ga,Mn)AsPhysical Review B, 1998
- (Ga,Mn)As: A new diluted magnetic semiconductor based on GaAsApplied Physics Letters, 1996
- Epitaxial orientation and magnetic properties of MnAs thin films grown on (001) GaAs: Template effectsApplied Physics Letters, 1994
- Molecular beam epitaxy of MnAs thin films on GaAsJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1994
- Diluted magnetic III-V semiconductorsPhysical Review Letters, 1989
- Temperature dependence of the mobility of two-dimensional hole systems in modulation-doped GaAs-(AlGa)AsApplied Physics Letters, 1984
- Two-dimensional hole gas at a semiconductor heterojunction interfaceApplied Physics Letters, 1980