Semiconductor surface and crystal physics studied by MBE
- 31 December 1979
- journal article
- Published by Elsevier in Progress in Crystal Growth and Characterization
- Vol. 2, 115-144
- https://doi.org/10.1016/0146-3535(81)90027-7
Abstract
No abstract availableKeywords
This publication has 51 references indexed in Scilit:
- Atomic geometry of semiconductor surfacesCritical Reviews in Solid State and Materials Sciences, 1978
- Tin-doping effects in GaAs films grown by molecular beam epitaxyJournal of Applied Physics, 1978
- Anomalous oxidation properties of the ZnSe (100) surfaceSolid State Communications, 1977
- In situ characterization of MBE grown GaAs and Al x Ga1−x As films using RHEED, SIMS, and AES techniquesApplied Physics A, 1977
- Dependence of residual damage on temperature during Ar+ sputter cleaning of siliconJournal of Applied Physics, 1977
- Molecular beam epitaxyProgress in Solid State Chemistry, 1975
- Surface and Bulk Contributions to Ultraviolet Photoemission Spectra of SiliconPhysical Review Letters, 1974
- The Relationship of Solid Surfaces to Vacuum Science and TechnologyJapanese Journal of Applied Physics, 1974
- GaAs Epitaxy by a Molecular Beam Method: Observations of Surface Structure on the (001) FaceJournal of Applied Physics, 1971
- Auger electron spectroscopySurface Science, 1971