Interaction between monolithic, junction-isolated lateral insulated-gate bipolar transistors
- 1 January 1991
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 38 (2) , 310-315
- https://doi.org/10.1109/16.69911
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- The effect of substrate doping on the performance of anode-shorted n-channel lateral insulated-gate bipolar transistorsIEEE Electron Device Letters, 1988
- Latching in lateral insulated gate bipolar transistorsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1987
- n-channel lateral insulated gate transistors: Part I—Steady-state characteristicsIEEE Transactions on Electron Devices, 1986
- IVB-4 performance of p-channel lateral insulated gate transistorsIEEE Transactions on Electron Devices, 1986
- Analysis and characterization of the hybrid Schottky injection field effect transistorPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1986
- Lateral resurfed COMFETElectronics Letters, 1984