The Competition between Ion Beam Induced Epitaxial Crystallization and Amorphization in Silicon: The Role of the Divacancy

This publication has 9 references indexed in Scilit:

• Dominant Influence of Beam-Induced Interface Rearrangement on Solid-Phase Epitaxial Crystallization of Amorphous Silicon
  Physical Review Letters, 1985
• Proportionality between ion-beam-induced epitaxial regrowth in silicon and nuclear energy deposition
  Physical Review B, 1985
• Ion-beam-induced epitaxial regrowth of amorphous layers in silicon on sapphire
  Physical Review B, 1984
• Novel low-temperature recrystallization of amorphous silicon by high-energy ion beam
  Applied Physics Letters, 1982
• A Monte Carlo computer program for the transport of energetic ions in amorphous targets
  Nuclear Instruments and Methods, 1980
• Ion-beam induced epitaxy of silicon
  Physics Letters A, 1979
• Radiation enhanced annealing of radiation damage in Ge
  Radiation Effects, 1975
• Radiation damage in ge produced by noble gas ions investigated by the secondary electron emission method
  Radiation Effects, 1975
• Relation of neutron to ion damage annealing in Si and Ge
  Radiation Effects, 1969