100 Watt Super Audio Amplifier Using New Mos Devices

1 August 1977

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Consumer Electronics

Vol. CE-23 (3) , 409-417
https://doi.org/10.1109/tce.1977.266916

Abstract

A 100 watt audio amplifier was recently developed using a new Power MOSFET which was developed by our MOS Device Group. The Power MOSFET has several advantages over bipolar transistors. It has good frequency response, no carrier storage delay, thermal stability, no secondary breakdown and high input impedance.

Keywords

MOS DEVICES
MOSFET CIRCUITS
POWER MOSFET
POWER AMPLIFIERS
BIPOLAR TRANSISTORS
FREQUENCY RESPONSE
DELAY
THERMAL STABILITY
ELECTRIC BREAKDOWN
IMPEDANCE

This publication has 1 reference indexed in Scilit:

A high power MOSFET with a vertical drain electrode and a meshed gate structure
IEEE Journal of Solid-State Circuits, 1976