Evidence for Shallow Acceptor Levels in MBE Grown GaN
- 1 January 1996
- journal article
- Published by Springer Nature in MRS Internet Journal of Nitride Semiconductor Research
Abstract
We report the results of photoluminescence measurements on a number of GaN thin films grown by MBE on GaAs (111)B substrates. In particular, we draw attention to a new observation of a line at approximately 3.40eV which is accompanied by complex fine structure and interpret it as due to a donor-acceptor (DA) transition. Assuming a donor energy of 30meV, we derive an acceptor binding energy of approximately 80meV which is very much smaller than the accepted value of 250meV for the well established Mg acceptor. However, our result is in agreement with a recent estimate of the hydrogenic acceptor energy as being 85meV.Keywords
This publication has 13 references indexed in Scilit:
- Acceptor ionization energies in gallium nitride: chemical trends and electronegativitiesSemiconductor Science and Technology, 1996
- Low-temperature luminescence study of GaN films grown by MBESemiconductor Science and Technology, 1996
- InGaN-Based Multi-Quantum-Well-Structure Laser DiodesJapanese Journal of Applied Physics, 1996
- Acceptor binding energy in GaN and related alloysSemiconductor Science and Technology, 1995
- GaN Core Relaxation Effects and Their Ramifications for P-Type DopingJapanese Journal of Applied Physics, 1994
- Candela-class high-brightness InGaN/AlGaN double-heterostructure blue-light-emitting diodesApplied Physics Letters, 1994
- P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)Japanese Journal of Applied Physics, 1989
- Luminescence in epitaxial GaN : CdJournal of Applied Physics, 1974
- Absorption, Reflectance, and Luminescence of GaN Epitaxial LayersPhysical Review B, 1971
- Donor-Acceptor Pair Lines in Cadmium SulfidePhysical Review B, 1969