Acceptor ionization energies in gallium nitride: chemical trends and electronegativities
- 1 May 1996
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 11 (5) , L827-L829
- https://doi.org/10.1088/0268-1242/11/5/002
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- p-type conduction in Mg-doped Ga0.91In0.09N grown by metalorganic vapor-phase epitaxyApplied Physics Letters, 1995
- Acceptor binding energy in GaN and related alloysSemiconductor Science and Technology, 1995
- p-type conduction in Mg-doped GaN and Al0.08Ga0.92N grown by metalorganic vapor phase epitaxyApplied Physics Letters, 1994
- On the Composition Dependence of the Be Acceptor Energy Level in AlxGa1−xAs (0 ≦x ≦ 1)Physica Status Solidi (a), 1992
- GaN, AlN, and InN: A reviewJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1992
- Properties of the 78 meV acceptor in GaAsPhysica B+C, 1987
- Properties of Zn-doped VPE-grown GaN. II. Optical cross sectionsJournal of Applied Physics, 1980
- Photoluminescence of ion-implanted GaNJournal of Applied Physics, 1976
- Optical investigations of Zn, Hg and Li doped GaNApplied Physics A, 1974
- Electrical Properties of Pure Silicon and Silicon Alloys Containing Boron and PhosphorusPhysical Review B, 1949