Red-light-emitting injection laser based on InP/GaInP self-assembled quantum dots

Red-light-emitting quantum dot injection lasers have been prepared by solid-source molecular beam epitaxy. The separate confinement heterostructure contains densely stacked layers of self-assembled InP quantum dots embedded in ${\mathrm{Ga}}_{\mathrm{0.51}}{\mathrm{In}}_{\mathrm{0.49}}\mathrm{P}$ waveguide and Si/Be-doped ${\mathrm{Al}}_{\mathrm{0.53}}{\mathrm{In}}_{\mathrm{0.47}}\mathrm{P}$ cladding layers. Edge-emitting laser diodes are processed, which show quantum dot lasing at 90 K. Thereby, the threshold current density is 172 A/cm². The energy of the laser line is at 1.757 eV, which is very close to the peak energy of subthreshold electroluminescence.