Structural and optical characterization of InP/GalnP islands grown by solid-source MBE
- 1 March 1996
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 25 (3) , 395-400
- https://doi.org/10.1007/bf02666609
Abstract
No abstract availableKeywords
This publication has 17 references indexed in Scilit:
- InAs/GaAs quantum dots radiative recombination from zero‐dimensional statesPhysica Status Solidi (b), 1995
- Nanoscale InP islands embedded in InGaPApplied Physics Letters, 1995
- Study of the two-dimensional–three-dimensional growth mode transition in metalorganic vapor phase epitaxy of GaInP/InP quantum-sized structuresApplied Physics Letters, 1994
- Photoluminescence of Single InAs Quantum Dots Obtained by Self-Organized Growth on GaAsPhysical Review Letters, 1994
- Nature of strained InAs three-dimensional island formation and distribution on GaAs(100)Applied Physics Letters, 1994
- Self-organized growth of strained InGaAs quantum disksNature, 1994
- MBE and MOCVD growth and properties of self-assembling quantum dot arrays in III-V semiconductor structuresSuperlattices and Microstructures, 1994
- Direct formation of quantum-sized dots from uniform coherent islands of InGaAs on GaAs surfacesApplied Physics Letters, 1993
- Nanoscale InP Islands for Quantum Box Structures by Hydride Vapor Phase EpitaxyJapanese Journal of Applied Physics, 1993
- Onset of incoherency and defect introduction in the initial stages of molecular beam epitaxical growth of highly strained InxGa1−xAs on GaAs(100)Applied Physics Letters, 1990