Lateral band-gap patterning and carrier confinement in InGaAs/GaAs quantum wells grown by molecular beam epitaxy on nonplanar dot patterns
- 17 August 1992
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 61 (7) , 813-815
- https://doi.org/10.1063/1.107753
Abstract
No abstract availableKeywords
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