Target heating during ion implantation and related problems
- 1 January 1979
- journal article
- research article
- Published by Taylor & Francis in Radiation Effects
- Vol. 44 (1) , 173-179
- https://doi.org/10.1080/00337577908245991
Abstract
We have undertaken a general analysis of wafer heating during implantation and first, we present general considerations of this problem with respect to amorphization doses extracted from Morehead and Crowder theory. Then, radiative properties of silicon wafers are measured: a law of variation of the emissivity with temperature is given; a comparison is made with values found in the literature. Dependence with experimental conditions (heat reflector, conductive losses) is also studied. Three methods for temperature measurement are used: temperature coefficient of a small resistor vacuum deposited on a face, thermocouple measurement and infrared detection. We compare the three kinds of results which are in good agreement and we make some comments about the temperature measurements using infrared detection.Keywords
This publication has 4 references indexed in Scilit:
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- A model for the formation of amorphous Si by ion bombardmentRadiation Effects, 1970
- Infrared Refractive Indexes of Silicon Germanium and Modified Selenium Glass*Journal of the Optical Society of America, 1957
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