Low-temperature growth of thick intrinsic and ultrathin phosphorous or boron-doped microcrystalline silicon films: Optimum crystalline fractions for solar cell applications
- 31 October 2001
- journal article
- Published by Elsevier in Solar Energy Materials and Solar Cells
- Vol. 69 (3) , 217-239
- https://doi.org/10.1016/s0927-0248(00)00391-3
Abstract
No abstract availableKeywords
This publication has 41 references indexed in Scilit:
- Hot-Wire CVD Poly-Silicon Films for Thin Film DevicesMRS Proceedings, 1998
- Metastability of Phosphorus- or Boron Doped a-Si:H FilmsMRS Proceedings, 1998
- Microcrystalline Silicon Growth: Deposition Rate Limiting FactorsMRS Proceedings, 1998
- Nanostructured Silicon thin films Deposited by PECVD in the Presence of Silicon NanoparticlesMRS Proceedings, 1997
- Electronic transport and structure of microcrystalline silicon deposited by the VHF-GD techniqueMRS Proceedings, 1997
- New features of the layer-by-layer deposition of microcrystalline silicon films revealed by spectroscopic ellipsometry and high resolution transmission electron microscopyApplied Physics Letters, 1996
- Experimental evidence for nanoparticle deposition in continuous argon–silane plasmas: Effects of silicon nanoparticles on film propertiesJournal of Vacuum Science & Technology A, 1996
- Enhancement of open circuit voltage in high efficiency amorphous silicon alloy solar cellsApplied Physics Letters, 1986
- Dielectric functions and optical parameters of Si, Ge, GaP, GaAs, GaSb, InP, InAs, and InSb from 1.5 to 6.0 eVPhysical Review B, 1983
- Berechnung verschiedener physikalischer Konstanten von heterogenen Substanzen. I. Dielektrizitätskonstanten und Leitfähigkeiten der Mischkörper aus isotropen SubstanzenAnnalen der Physik, 1935