Interface states and fixed charges in nanometer-range thin nitrided oxides prepared by rapid thermal annealing
- 1 December 1986
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 7 (12) , 669-671
- https://doi.org/10.1109/edl.1986.26514
Abstract
Ultra-thin oxides (5-12 nm) were nitrided by lamp-heated rapid thermal annealing in an ammonia ambient at 900-1150°C for 5-300 s. Interface states and fixed charges in the nitrided oxides have been studied, and, for a given temperature, both are found to vary in a similar manner as nitridation time increases: at first both increase, reach respective maxima at a certain nitridation time, and then decrease gradually showing turnarounds. Interface state densities and fixed charge densities at the initial and the final nitridation stages are in the low 10 10 - cm -2 /eV range and the low 10 11 -cm -2 range, respectively, and are comparable with those of thermally grown oxides.Keywords
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