Amplification of 193 nm radiation in argon-fluoride and generation of tunable VUV radiation by high-order anti-Stokes Raman scattering
- 1 November 1984
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 20 (11) , 1284-1287
- https://doi.org/10.1109/jqe.1984.1072308
Abstract
Tuned narrow-bandwidth UV radiation at 193 nm is generated by SRS of dye laser radiation and is amplified in ArF sections. In a subsequent second hydrogen Raman cell anti-Stokes radiation up to the sixth order (around 130 nm) is generated. Power measurements and calibration are described.Keywords
This publication has 12 references indexed in Scilit:
- Excimer lasers with high spectral brightness working in the regenerative amplifier regimeAIP Conference Proceedings, 1983
- Angular distribution of high-order anti-Stokes stimulated Raman scattering in hydrogenJournal of the Optical Society of America, 1983
- Detection of carbon impurities in plasmas by atomic fluorescence spectroscopyJournal of Nuclear Materials, 1982
- Magnesium fluoride windowed deuterium lamps as radiance transfer standards between 115 and 370 nmJournal of Physics E: Scientific Instruments, 1980
- Tunable coherent radiation source covering a spectral range from 185 to 880 nmApplied Physics A, 1979
- High intensity Raman interactionsProgress in Quantum Electronics, 1979
- Nonlinear Optics of Free Atoms and MoleculesSpringer Series in Optical Sciences, 1979
- High-resolution cw stimulated Raman spectroscopy in molecular hydrogenOptics Letters, 1978
- Experimental investigation of mechanisms of parametric generation of stimulated Raman scattering componentsSoviet Journal of Quantum Electronics, 1976
- The Stimulated Raman EffectAmerican Journal of Physics, 1967