Radiation Effects on Silicon MESFET Devices and Circuits
- 1 January 1981
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 28 (6) , 4376-4379
- https://doi.org/10.1109/tns.1981.4335732
Abstract
An experimental evaluation of the radiation tolerance of silicon MESFET devices and simple digital integrated circuits is presented. Circuit performance in both total dose and transient radiation environments have been determined. Test circuits employing both enhancement and depletion logic elements of various geometries are described and the radiation response compared.Keywords
This publication has 3 references indexed in Scilit:
- Optimization of self-aligned silicon MESFETs for VLSI at micron dimensionsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1980
- A device model for an ion-implanted MESFETIEEE Transactions on Electron Devices, 1979
- Fabrication and performance of submicron silicon MESFETPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1978