Large-signal and small-signal models for arbitrarily-doped four-terminal field-effect transistors

1 December 1966

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices

Vol. 13 (12) , 819-829
https://doi.org/10.1109/t-ed.1966.15855

Abstract

Models are derived for a four-terminal field-effect transistor (FTFET) with an arbitrary (one-dimensional) impurity distribution. The models apply for both four-terminal and conventional three-terminal devices operated in either the pinch-off or nonpinch-off modes; moreover, they describe behavior when either large or small signals are applied to the gates. The model parameters can be determined either from terminal measurements or from knowledge of the physical make-up. Because an arbitrary impurity distribution is assumed in their derivation, the models represent devices made with any of the common fabrication techniques. Measured step-function response of epitaxial, single-diffused and double-diffused FTFET's shows good agreement with calculated behavior for broad ranges of resistive source and load terminations.

Keywords

This publication has 19 references indexed in Scilit:

Transient performance of four-terminal field-effect transistors
IEEE Transactions on Electron Devices, 1965
Four-terminal field-effect transistors
IEEE Transactions on Electron Devices, 1965
The equivalent circuit of an arbitrarily doped field-effect transistor
Solid-State Electronics, 1965
Low-frequency operation of four-terminal field-effect transistors
IEEE Transactions on Electron Devices, 1964
Diffusion of impurities during epitaxy
Proceedings of the IEEE, 1964
Basic limits on the properties of field-effect transistors
Solid-State Electronics, 1963
Epitaxial FET cutoff voltage
Proceedings of the IEEE, 1963
Physical phenomenon responsible for saturation current in field effect devices
Solid-State Electronics, 1963
New modes of operation for field effect devices
Proceedings of the IEEE, 1963
Diffused Junction Depletion Layer Calculations
Bell System Technical Journal, 1960