Photoluminescent Properties of p-GaAs/Electrolyte Interface. Evidence for Bandedge Shift during Photoelectrochemical Hydrogen Evolution Reaction
- 5 November 1986
- journal article
- Published by Oxford University Press (OUP) in Chemistry Letters
- Vol. 15 (11) , 1951-1954
- https://doi.org/10.1246/cl.1986.1951
Abstract
No abstract availableThis publication has 15 references indexed in Scilit:
- First observation of electroluminescence at the p-type semiconductor/electrolyte interface caused by electron injection. Energetics of adsorbed hydrogen at the p-gallium arsenide electrodeJournal of the American Chemical Society, 1986
- Analysis of Trapping and Recombination Effects in Photoelectrochemical Processes at Semiconductor Electrodes: Investigations at n‐GaAsBerichte der Bunsengesellschaft für physikalische Chemie, 1985
- Evidence for inversion layer formation at the p-type gallium arsenide/persulfate solution interface under strong cathodic bias: electroluminescence caused by carrier injectionThe Journal of Physical Chemistry, 1984
- Injection electroluminescence of n-indium phosphide in dilute nitric acidThe Journal of Physical Chemistry, 1983
- Semiconductor Electrodes: LI . Efficient Electroluminescence at Electrode in Aqueous ElectrolytesJournal of the Electrochemical Society, 1983
- Effects of the Helmholtz Layer Capacitance on the Potential Distribution at Semiconductor/Electrolyte Interface and the Linearity of the Mott‐Schottky PlotJournal of the Electrochemical Society, 1983
- The Influence of Surface Recombination and Trapping on the Cathodic Photocurrent at p‐Type III‐V ElectrodesJournal of the Electrochemical Society, 1982
- Solar energy conversion by photoelectrochemical processesElectrochimica Acta, 1980
- The Potential Distribution at the TiO2 Aqueous Electrolyte InterfaceJournal of the Electrochemical Society, 1979
- Luminescence of Zinc Oxide Crystals Controlled by Electrode Potential and Electrochemical ReactionsThe Journal of Chemical Physics, 1972