Methodology for calculating turn-off transient of photoconductive circuit elements in picosecond optoelectronics
- 1 April 1983
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 19 (4) , 648-657
- https://doi.org/10.1109/jqe.1983.1071902
Abstract
No abstract availableThis publication has 17 references indexed in Scilit:
- Sub-100 ps bulk-recombination-limited InP:Fe photoconductive detectorPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1981
- The Growth and Properties of Large Semi-Insulating Crystals of Indium PhosphidePublished by Springer Nature ,1980
- Electron Mobility Calculations for Fe-Doped InPPublished by Springer Nature ,1980
- Computer-aided study of steady-state carrier lifetimes under arbitrary injection conditionsSolid-State Electronics, 1979
- Optical and ESR analysis of the Fe acceptor in InPSolid State Communications, 1977
- Bulk and interface imperfections in semiconductorsSolid-State Electronics, 1976
- Thermal and optical emission and capture rates and cross sections of electrons and holes at imperfection centers in semiconductors from photo and dark junction current and capacitance experimentsSolid-State Electronics, 1970
- The equivalent circuit model in solid-state electronics—Part I: The single energy level defect centersProceedings of the IEEE, 1967
- Decay of Excess Carriers in SemiconductorsPhysical Review B, 1958
- Statistics of the Recombinations of Holes and ElectronsPhysical Review B, 1952