On the Optically Determined Relaxation Time of Heavily Doped p‐Type Silicon
- 1 February 1982
- journal article
- research article
- Published by Wiley in Physica Status Solidi (b)
- Vol. 109 (2) , K85-K88
- https://doi.org/10.1002/pssb.2221090243
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Infrared reflectance spectra of thin epitaxial silicon layersJournal of Applied Physics, 1981
- Optical constants of various heavily doped p- and n-type silicon crystals obtained by Kramers-Kronig analysisInfrared Physics, 1977
- Determination of effective mass values by a Kramers-Kronig analysis for variously doped silicon crystalsInfrared Physics, 1977
- Mean momentum relaxation time and scattering processes from absorption spectra in millimetric and far infrared ranges— case of n-SiInfrared Physics, 1975
- Free carrier reflectivity in optically homogeneous siliconPhysica Status Solidi (a), 1972
- Determination of Optical Constants and Carrier Effective Mass of SemiconductorsPhysical Review B, 1957