Gallium Arsenide Layers Grown by Molecular Beam Epitaxy on Single Crystalline Germanium Islands on Insulator

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Abstract
Gallium arsenide (GaAs) layers have successfully been grown by molecular beam epitaxy on single crystalline germanium (Ge) islands, recrystallized by zone melting with SiO2 capping layers, on thermally-oxidized Si-wafers. The GaAs layers, grown on the single crystalline Ge islands, show smooth surfaces without any grain-boundaries, while those, grown on the Ge islands with grain-boundaries and on the SiO2, have grain-boundaries. The GaAs layers on the single crystalline Ge islands emit photoluminescence, the intensity of which is almost comparable to that of GaAs layers on bulk Ge crystals.