Homogeneous semi-insulating GaAs crystal growth by a new LEC technique with as injection into melt during growth
- 1 May 1986
- journal article
- research article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 15 (3) , 169-173
- https://doi.org/10.1007/bf02655332
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Inhomogeneity of Resistivity in In-Doped Dislocation-Free Semi-Insulating LEC GaAsJapanese Journal of Applied Physics, 1985
- Effect of Water Content of B2O3 Encapsulant on Semi-Insulating LEC GaAs CrystalJapanese Journal of Applied Physics, 1985
- Improved Uniformity of Resistivity Distribution in LEC Semi-Insulating GaAs Produced by AnnealingJapanese Journal of Applied Physics, 1984
- Growth and Resistivity Characteristics of Undoped Semi-Insulating GaAs Crystals with Low Dislocation DensityJapanese Journal of Applied Physics, 1984
- Direct observation of dislocation effects on threshold voltage of a GaAs field-effect transistorApplied Physics Letters, 1983