Growth and Resistivity Characteristics of Undoped Semi-Insulating GaAs Crystals with Low Dislocation Density
- 1 July 1984
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 23 (7A) , L441
- https://doi.org/10.1143/jjap.23.l441
Abstract
Remarkably low dislocation density of approximately 1000/cm2 (minimum 600/cm2) and uniform distribution were attained in two inch diameter undoped GaAs single crystals grown by an improved LEC technique. Resistivity was revealed to be high enough (1×108 Ω·cm) and homogeneity was remarkably improved over that of conventional high dislocation density LEC crystal.Keywords
This publication has 4 references indexed in Scilit:
- Growth of Low and Homogeneous Dislocation Density GaAs Crystal by Improved LEC TechniqueJapanese Journal of Applied Physics, 1984
- Direct observation of dislocation effects on threshold voltage of a GaAs field-effect transistorApplied Physics Letters, 1983
- Symmetrical contours of deep level EL2 in liquid encapsulated Czochralski GaAsApplied Physics Letters, 1983
- Defect structure introduced during operation of heterojunction GaAs lasersApplied Physics Letters, 1973