XPS and XRD investigations of Dy/Si interface

This publication has 25 references indexed in Scilit:

• AES and EELS study of ErSi2 and its behaviour under ion bombardment and oxygen exposure
  Solid State Communications, 1986
• The electron states of silicides: Results and perspectives
  Thin Solid Films, 1986
• Formation of GdSi2 under UHV evaporation and i n s i t u annealing
  Applied Physics Letters, 1986
• Electronic structure of the Yb/Ge(111) interface
  Physical Review B, 1986
• Electronic properties on silicon-transition metal interface compounds
  Surface Science Reports, 1985
• Spectroscopic and structural investigations of the YbAl(110), YbNi(110) and YbSi(111) interfaces as a function of temperature
  Surface Science, 1985
• Cluster-Induced Reactions at a Metal-Semiconductor Interface: Ce on Si(111)
  Physical Review Letters, 1984
• Samarium chemisorption on group-IV semiconductors
  Physical Review B, 1984
• Low Temperature Reactions at Si-Metal Contacts –From SiO₂ Growth due to Si–Au Reaction to the Mechanism of Silicide Formation
  Japanese Journal of Applied Physics, 1983
• The structure and properties of metal-semiconductor interfaces
  Surface Science Reports, 1982