A unified explanation for secondary ion yields
- 1 October 1978
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 33 (7) , 578-580
- https://doi.org/10.1063/1.90466
Abstract
The pure element secondary ion yields under oxygen and cesium ion bombardment are shown to be solely dependent on a) the ionization potential (or electron affinity for negative ionization) of the sputtered atom and b) the reciprocal of the matrix sputtering yield which determines the equilibrium concentration of implanted oxygen or cesium. This unified approach accounts for the yields of C±, Si±, Ge± and Sn± from the pure elements as well as of Ga± and As± from gallium arsenide.Keywords
This publication has 7 references indexed in Scilit:
- Evaluation of a cesium positive ion source for secondary ion mass spectrometryAnalytical Chemistry, 1977
- Evaluation of the local thermal equilibrium model for quantitative secondary ion mass spectrometric analysisAnalytical Chemistry, 1976
- Binding energies in atomic negative ionsJournal of Physical and Chemical Reference Data, 1975
- Secondary−ion mass spectrometry and its use in depth profilingJournal of Vacuum Science and Technology, 1975
- The mechanism of simultaneous implantation and sputtering by high energy oxygen ions during secondary ion mass spectrometry (SIMS) analysisSurface Science, 1974
- Thermodynamic approach to the quantitative interpretation of sputtered ion mass spectraAnalytical Chemistry, 1973
- Ion Microprobe Mass AnalyzerScience, 1972