GaP-GaAs n-p Hetero junctions
- 1 January 1967
- journal article
- research article
- Published by Wiley in Physica Status Solidi (b)
- Vol. 24 (1) , K57-K60
- https://doi.org/10.1002/pssb.19670240155
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
- The Preparation and Properties of Vapor-Grown GaAs-GaP AlloysJournal of the Electrochemical Society, 1963
- Chemical Transport and Epitaxial Deposition of Gallium ArsenideJournal of the Electrochemical Society, 1963
- Experiments on Ge-GaAs heterojunctionsSolid-State Electronics, 1962
- Epitaxial Vapor Growth of GaAs on Ge Single CrystalsJournal of the Physics Society Japan, 1961
- Germanium-Gallium Arsenide Heterojunctions [Letter to the Editor]IBM Journal of Research and Development, 1960