Performance of GaAs MESFET's on InP substrates
- 1 August 1989
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 10 (8) , 389-390
- https://doi.org/10.1109/55.31766
Abstract
The fabrication of GaAs MESFET's with 0.9- mu m gate length on InP substrates, after growth of the heteroepitaxial material by metalorganic chemical vapor deposition (MOCVD) is described. The MESFETs exhibit extrinsic transconductances of 377 mS-mm/sup -1/, the highest value yet reported for GaAs-on-InP devices. The drain I-V characteristic shows excellent saturation, a knee voltage of 0.75 V, and no light sensitivity. A unity current-gain cutoff frequency of 22 GHz and a maximum frequency of oscillation of 30 GHz are obtained for these MESFETs.This publication has 5 references indexed in Scilit:
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