Switching characteristics of silicon carbide power PiN diodes
- 1 February 2000
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 44 (2) , 317-323
- https://doi.org/10.1016/s0038-1101(99)00238-5
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Study of bulk and elementary screw dislocation assisted reverse breakdown in low-voltage (>250 V) 4H-SiC p/sup +/-n junction diodes. I. DC propertiesIEEE Transactions on Electron Devices, 1999
- Silicon carbide MOSFET technologySolid-State Electronics, 1996
- Silicon carbide high-power devicesIEEE Transactions on Electron Devices, 1996
- SiC Power DevicesMRS Proceedings, 1996