Silicon carbide MOSFET technology
- 30 November 1996
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 39 (11) , 1531-1542
- https://doi.org/10.1016/0038-1101(96)00079-2
Abstract
No abstract availableKeywords
This publication has 27 references indexed in Scilit:
- SiC MOS interface characteristicsIEEE Transactions on Electron Devices, 1994
- Silicon carbide UV photodiodesIEEE Transactions on Electron Devices, 1993
- SiC boule growth by sublimation vapor transportJournal of Crystal Growth, 1991
- Dopant Redistribution during Thermal Oxidation of Monocrystalline Beta ‐ SiC Thin FilmsJournal of the Electrochemical Society, 1989
- Chemical vapor deposition and characterization of 6H-SiC thin films on off-axis 6H-SiC substratesJournal of Applied Physics, 1988
- Mo/Ti Double Layer Contact for VLSIJournal of the Electrochemical Society, 1987
- Time-dependent-dielectric breakdown of thin thermally grown SiO2filmsIEEE Transactions on Electron Devices, 1985
- Doping Profiles by MOSFET Deep Depletion C(V)Journal of the Electrochemical Society, 1975
- Si-SiO[sub 2] Fast Interface State MeasurementsJournal of the Electrochemical Society, 1968
- An investigation of surface states at a silicon/silicon oxide interface employing metal-oxide-silicon diodesSolid-State Electronics, 1962