Study of hydrogen interaction with SiO2/Si(100) system using positrons
- 1 May 1991
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 69 (9) , 6603-6606
- https://doi.org/10.1063/1.348872
Abstract
We describe positron annihilation studies of SiO2/Si(100) structures having 100‐nm‐thick oxide grown by plasma enhanced chemical vapor deposition. A normalized shape parameter is used to characterize the positron annihilation spectra. Activation and passivation of interface states by atomic hydrogen are demonstrated by repeated vacuum anneal and atomic hydrogen exposure. Hydrogen activation energy is derived for one of the samples as ■=2.02±0.07 eV.This publication has 9 references indexed in Scilit:
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