Interface States in Abrupt SiO2/4H- and 6HSiC(0001) from First-Principles: Effects of Si Dangling Bonds, C Dangling Bonds and C Clusters
- 15 June 2004
- journal article
- Published by Trans Tech Publications, Ltd. in Materials Science Forum
- Vol. 457-460, 1297-1300
- https://doi.org/10.4028/www.scientific.net/msf.457-460.1297
Abstract
No abstract availableKeywords
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