Optical in situ monitoring of solid phase crystallization of amorphous silicon
- 1 August 1996
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 165 (3) , 341-344
- https://doi.org/10.1016/0022-0248(96)00254-0
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- Pd induced lateral crystallization of amorphous Si thin filmsApplied Physics Letters, 1995
- Structure and grain boundary defects of recrystallized silicon films prepared from amorphus silicon deposited using disilaneJournal of Applied Physics, 1995
- High-resolution transmission electron microscopy study of solid phase crystallized silicon thin films on SiO2: Crystal growth and defects formationJournal of Applied Physics, 1995
- Thermal chemical vapor deposition of semiconductors for thin film transistor applicationsMicroelectronic Engineering, 1994
- Polycrystalline Silicon Thin Film Transistors for Liquid Crystal DisplaysSolid State Phenomena, 1994
- Determination of Crystallisation Parameters of a-Si from In Situ Conductance Measurements and Transmission Electron Microscopy AnalysisSolid State Phenomena, 1994
- In situcrystallization of amorphous silicon in the transmission electron microscopePhilosophical Magazine A, 1993
- Structure and crystallization of low-pressure chemical vapor deposited silicon films using Si2H6 gasJournal of Applied Physics, 1992
- Large grain polycrystalline silicon by low-temperature annealing of low-pressure chemical vapor deposited amorphous silicon filmsJournal of Applied Physics, 1988
- Kinetics of solid phase crystallization in amorphous siliconMaterials Science Reports, 1988