Annealing mechanism of radiation damage and dopants in pulsed laser light irradiated ion implanted layers
- 16 January 1979
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 51 (1) , K79-K82
- https://doi.org/10.1002/pssa.2210510154
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
- Amorphous thickness dependence in the transition to single crystal induced by laser pulsePhysics Letters A, 1978
- Physical and electrical properties of laser-annealed ion-implanted siliconApplied Physics Letters, 1978
- Laser reordering of implanted amorphous layers in GaAsSolid-State Electronics, 1978
- Temperature rise induced by a laser beamJournal of Applied Physics, 1977
- Investigation of laser induced diffusion and annealing processes of arsenic-implanted silicon crystalsPhysica Status Solidi (a), 1977
- Laser annealing of arsenic implanted siliconPhysics Letters A, 1977