68.2: 3.5 Inch QCIF+ AM‐OLED Panel Based on Oxide TFT Backplane
- 1 May 2007
- journal article
- Published by Wiley in SID Symposium Digest of Technical Papers
- Vol. 38 (1) , 1826-1829
- https://doi.org/10.1889/1.2785691
Abstract
IGZO TFTs were fabricated on a glass substrate by conventional photo‐lithography and wet‐etching processes. The real mobility of our device was about 95 cm2/Vs and had very low dependence on the variation of W/L, channel length and channel width. An IGZO TFT array was also fabricated and a top emission OLED device was successfully driven by it. Therefore, the oxide TFT could be one of the promising candidates as a backplane for the OLED device.Keywords
This publication has 6 references indexed in Scilit:
- Amorphous Oxide Semiconductors for High-Performance Flexible Thin-Film TransistorsJapanese Journal of Applied Physics, 2006
- Influence of the semiconductor thickness on the electrical properties of transparent TFTs based on indium zinc oxideJournal of Non-Crystalline Solids, 2006
- 4.3: Transparent ZnO Thin Film Transistor Array for the Application of Transparent AM-OLED DisplaySID Symposium Digest of Technical Papers, 2006
- Fully Transparent ZnO Thin‐Film Transistor Produced at Room TemperatureAdvanced Materials, 2005
- High mobility transparent thin-film transistors with amorphous zinc tin oxide channel layerApplied Physics Letters, 2004
- Thin-Film Transistor Fabricated in Single-Crystalline Transparent Oxide SemiconductorScience, 2003