Effects of “fast” rapid thermal anneals on sub-keV boron and BF2 ion implants
- 1 December 1999
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 28 (12) , 1340-1344
- https://doi.org/10.1007/s11664-999-0119-6
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Ultra-shallow junction formation using very low energy B and BF/sub 2/ sourcesPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Fluorine effects in BF/sub 2//sup +/ implants at various energiesPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Optimization of RTA parameters to produce ultra-shallow, highly activated B+, BF 2 + , and As+ ion implanted junctionsJournal of Electronic Materials, 1998
- RTP requirements to yield uniform and repeatable ultra-shallow junctions with low energy boron and BF2 ion implantsJournal of Electronic Materials, 1998