Detection of CF2 radicals in a plasma etching reactor by laser-induced fluorescence spectroscopy
- 1 May 1982
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 40 (9) , 779-781
- https://doi.org/10.1063/1.93257
Abstract
Laser‐induced fluorescence spectroscopy was used to detect ground‐state CF2 radicals in 13.56‐MHz discharge plasmas sustained in C2F6 and CF4 in a plasma etching reactor. Measurements of the relative CF2(X̃) density in each plasma as a function of discharge power demonstrated that CF2 densities were significantly higher in the C2F6 plasma. These results provide the first direct observation of CF2(X̃) radicals in a plasma etching reactor.Keywords
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