Bias dependence of RF power characteristics of 4H-SiC MESFETs
- 19 November 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
4H-SiC MESFETs have been fabricated, packaged, and RF power tested under a wide range of bias conditions, ranging from Class A to Class B gate bias, and from 10 V to 50 V drain bias. Peak device performance included output power of 30.2 dBm (3.1 W/mm) at the 3 dB compression point and 38.9% power added efficiency in Class A operation, and 65.7% power added efficiency with 28.8 dBm (2.27 W/mm) maximum output power under Class B conditions. We believe this to be both the highest power density and the highest power added efficiency reported for a SiC MESFET Author(s) Moore, K. Motorola Phoenix Corp. Res. Labs., Tempe, AZ, USA Weitzel, C. ; Nordquist, K. ; Pond, L., III ; Palmour, J. ; Allen, S. ; Carter, C., Jr.Keywords
This publication has 2 references indexed in Scilit:
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- 4H-SiC MESFET with 2.8 W/mm power density at 1.8 GHzIEEE Electron Device Letters, 1994