Growth processes and relaxation mechanisms in the molecular beam epitaxy of InAs/GaAs heterostructures
- 1 May 1991
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 111 (1-4) , 383-387
- https://doi.org/10.1016/0022-0248(91)91005-u
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
- Structural and optical properties of (100) InAs single-monolayer quantum wells in bulklike GaAs grown by molecular-beam epitaxyPhysical Review B, 1990
- Migration-enhanced epitaxy of GaAs and AlGaAsJournal of Crystal Growth, 1989
- Morphological transformations of thin heteroepitaxial filmsThin Solid Films, 1987
- Improved assessment of structural properties of As/GaAs heterostructures and superlattices by double-crystal x-ray diffractionPhysical Review B, 1986