Kinetic processes of NF3 etchant gas discharges
- 1 March 1985
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 57 (5) , 1596-1601
- https://doi.org/10.1063/1.334477
Abstract
Some of the fundamental properties of the NF3 etchant gas discharge were investigated. The dissociation of the parent gas molecules was inferred using mass spectrometric methods, and it was found that the discharge is much more effective at dissociating NF3 than CF4. Furthermore, the percentage dissociation of the NF3 was extremely large, ∼50%. Using a pulsed discharge it was possible to observe the time evolution of the dissociation products. These studies have led to a mathematical description of the dissociation and product formation kinetics.This publication has 8 references indexed in Scilit:
- Sensitive, Nonintrusive,In-SituMeasurement of Temporally and Spatially Resolved Plasma Electric FieldsPhysical Review Letters, 1984
- Negative ion densities in NF3 dischargesApplied Physics Letters, 1984
- Anisotropic etching of SiO2 in low-frequency CF4/O2 and NF3/Ar plasmasJournal of Applied Physics, 1984
- Plasma etching of sputtered Mo and MoSi2 thin films in NF3 gas mixturesJournal of Applied Physics, 1982
- The design of plasma etchantsPlasma Chemistry and Plasma Processing, 1981
- Comparison of the Etching and Plasma Characteristics of Discharges in CF 4 and NF 3Journal of the Electrochemical Society, 1981
- Decomposition and product formation in CF4-O2 plasma etching silicon in the afterglowJournal of Applied Physics, 1981
- Electronic energy transfer processes in fluorine-containing radicals: singlet NFChemical Physics Letters, 1970