Effective velocity-field characteristics in submicron GaAs MESFET's including near ballistic transport
- 31 December 1989
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 32 (12) , 1123-1127
- https://doi.org/10.1016/0038-1101(89)90201-3
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
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- Modeling of a submicrometer gate field-effect transistor including effects of nonstationary electron dynamicsJournal of Applied Physics, 1980
- Velocity overshoot effect on a short-gate microwave MESFETInternational Journal of Electronics, 1979