High rate d.c. reactively sputtered metal-oxy-fluorine dielectric materials
- 15 April 1986
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 138 (2) , 279-287
- https://doi.org/10.1016/0040-6090(86)90400-1
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
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- Production and properties of high rate sputtered low index transparent dielectric materials based on aluminium-oxy-fluorineSolar Energy Materials, 1985
- Optical properties of d.c. reactively sputtered thin filmsThin Solid Films, 1984
- Metal-containing fluoropolymer films produced by simultaneous plasma etching and polymerization: Effects of hydrogen or oxygenJournal of Applied Physics, 1980
- Metal Containing Fluoropolymer Films Produced by Simultaneous Plasma Etching and PolymerizationPublished by American Chemical Society (ACS) ,1979
- Ion-surface interactions in plasma etchingJournal of Applied Physics, 1977